2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 2

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
2)
long.
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Perfomed on a 40x40mm
2
FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
2)
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
T
V
V
V
V
V
|V
I
D
page 2
j
GS
DS
DS
DS
GS
GS
GS
GS
=25 °C
=0.24 A
DS
=V
=60 V, V
=60 V,
= 0 V, I
=0 V, T
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
j
=150 °C
=250 µA
D
=250 µA
D
GS
DS
DS(on)max
=0.5 A
=0.25 A
=-10 V,
=0 V
,
min.
1.5
0.2
60
-
-
-
-
-
-
Values
0.36
typ.
2.1
2.0
1.6
1
-
-
-
-
max.
250
2.5
0.1
2N7002DW
10
5
4
3
-
-
Unit
K/W
V
µA
nA
Ω
S
2011-06-16