2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 4

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.5
0.4
0.3
0.2
0.1
10
10
DS
0
-1
-2
-3
1
0
A
); T
0
)
1
limited by on-state
resistance
A
p
=25 °C; D =0
40
T
V
A
DS
80
10
[°C]
[V]
120
100 µs
10 µs
10 ms
1 ms
DC
1 µs
160
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.35
0.25
0.15
0.05
=f(t
0.3
0.2
0.1
10
10
10
10
A
0
3
2
1
0
); V
10
p
0
)
0.01
-5
0.2
0.02
0.1
0.5
GS
10
≥10 V
0.05
-4
p
/T
single pulse
10
40
-3
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
10
120
2N7002DW
1
10
2
2011-06-16
10
160
3