2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 3

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=0.5 A, R
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=0 V, V
=30 V, V
=48 V, I
=0 to 10 V
=0 V, I
F
F
DS
=0.5 A,
G
=0.5 A,
D
GS
=6 Ω
=0.5 A,
=25 V,
=10 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.05
0.96
typ.
4.1
2.0
3.0
3.3
5.5
3.1
0.2
0.4
4.0
8.5
2.4
13
-
-
max.
4.5
0.1
0.4
0.6
0.3
1.2
1.2
2N7002DW
20
13
6
3
5
9
5
4
-
Unit
pF
ns
nC
V
A
V
ns
nC
2011-06-16