STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 7

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

STS8DN3LLH5
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
0.7
0.5
(V)
1.1
1.0
0.9
0.8
0.4
V
1.2
0.6
12
10
GS
0.8
0.7
0.6
0.9
0.5
0.4
SD
6
4
2
8
0
-50
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
V
2
DD
I
2
D
=11A
0
=15V
4
4
T
50
J
=-50°C
6
6
I
D
100
8
=250µA
8
T
T
J
10
=175°C
J
=25°C
10
150
Q
I
SD
Doc ID 16967 Rev 1
g
T
(nC)
AM04961v1
AM04958v1
AM04960v1
(A)
J
(°C)
Figure 11. Normalized on resistance vs
(norm)
R
1000
DS(on)
600
400
200
(pF)
800
0.8
0.6
1.8
1.6
1.4
1.2
1.0
C
0
-50
0
Crss
Capacitance variations
temperature
0
V
10
I
D
GS
=5.5A
=10V
T
f=1MHz
Electrical characteristics
J
50
=25°C
100
20
150
V
DS
AM04961v1
T
AM04959v1
(V)
J
Ciss
(°C)
Coss
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