STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 5

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

STS8DN3LLH5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16967 Rev 1
V
R
Figure 13
I
I
di/dt = 100 A/µs,
V
DD
SD
SD
G
DD
=4.7 Ω, V
Test conditions
=15 V, I
Test conditions
= 10 A, V
= 10 A,
= 25 V, Tj=150 °C
D
GS
= 5 A,
GS
=10 V
=0
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ.
20.8
10.5
Typ.
21.1
4.2
3.5
1
4
Max
Max.
1.1
10
40
-
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
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