STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 6

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
100
0.01
0.1
(norm)
(A)
BV
10
I
D
1
1.00
0.95
1.05
0.90
100
1.10
0.1
(A)
DSS
80
60
40
20
I
D
0
-50
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
1
0
1
I
D
=1mA
V
2
GS
50
=10V
VDSS
10
3
100
Tc=25°C
Tj=150°C
Single
pulse
vs temperature
4
150
5V
4V
V
3V
V
DS
DS
Doc ID 16967 Rev 1
1s
100ms
10ms
AM04956v1
(V)
(V)
T
AM04963v1
AM04954v1
J
(°C)
Figure 3.
Figure 5.
Figure 7.
R
(Ohm)
DS(on)
100
(A)
80
60
40
20
I
D
25
20
15
10
0
5
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
V
2
DS
=4V
4
4
V
I
GS
D
=5A
6
=10V
6
8
8
STS8DN3LLH5
10
10
V
GS
AM04957v1_a
I
(V)
AM04955v1
D
(A)