STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 4

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STS8DN3LLH5

Manufacturer Part Number
STS8DN3LLH5
Description
MOSFET 2N-CH 30V 10A SO8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS8DN3LLH5

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
724pF @ 25V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
15.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
22 V
Continuous Drain Current
10 A
Power Dissipation
2.7 W
Gate Charge Qg
5.4 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10391-2

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Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
Q
oss
rss
iss
gs
gd
G
g
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 16967 Rev 1
V
V
V
V
Figure 14
f=1 MHz gate dc bias=0
test signal level = 20 mV
open drain
I
V
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
=0
= 4.5 V
=15 V, I
= V
= 10 V, I
= 4.5 V, I
= 25 V, f=1 MHz,
= max rating,
=max rating @125 °C
= ±22 V
Test conditions
Test conditions
GS
, I
D
D
D
D
= 10 A
= 5 A
= 250 µA
= 5 A
GS
= 0
Min.
Min.
30
1
-
-
-
0.0155
0.020
Typ.
Typ.
724
132
5.4
2.1
21
2
STS8DN3LLH5
0.019
0.022
Max.
Max.
±
3.3
100
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
V
V

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