STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 10
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STS8DN3LLH5
Manufacturer Part Number
STS8DN3LLH5
Description
MOSFET 2N-CH 30V 10A SO8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STS8DN3LLH5.pdf
(12 pages)
Specifications of STS8DN3LLH5
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
724pF @ 25V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
15.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
22 V
Continuous Drain Current
10 A
Power Dissipation
2.7 W
Gate Charge Qg
5.4 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10391-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STS8DN3LLH5
Manufacturer:
ST
Quantity:
12 000
Part Number:
STS8DN3LLH5
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
10/12
DIM.
a1
a2
a3
b1
c1
e3
M
A
C
D
E
S
b
e
F
L
MIN.
0.65
0.35
0.19
0.25
0.1
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
Doc ID 16967 Rev 1
mm.
TYP
1.27
3.81
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45 (typ.)
8 (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
MIN.
0.14
0.050
0.150
TYP.
inch
STS8DN3LLH5
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023