FDS6898A Fairchild Semiconductor, FDS6898A Datasheet - Page 4

• Manufacturer Part Number: FDS6898A
• Description: MOSFET N-CH DUAL 20V 9.4A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6898A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1821pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.014 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6898ATR

Typical Characteristics
0.01
100
0.1
10
10
1
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
0.001
0.01
0.1
I
D
SINGLE PULSE
R
R
0.0001
1
= 9.4A
DS(ON)
JA
V
T
5
GS
A
= 135
= 25
= 10V
LIMIT
0.1
D = 0.5
o
o
V
C
C/W
DS
0.2
0.05
10
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.02
0.01
Q
g
, GATE CHARGE (nC)
SINGLE PULSE
15
0.001
1
DC
Figure 11. Transient Thermal Response Curve.
20
10s
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
V
10ms
DS
25
= 5V
1ms
10
0.01
100µs
15V
30
10V
100
35
0.1
t , TIME (sec)
2500
2000
1500
1000
500
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
1
RSS
C
0.01
OSS
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
t
1
C
, TIME (sec)
ISS
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
- T
JA
JA
100
(t) = r(t) * R
A
t
= 135 °C/W
1
= P * R
t
2
15
SINGLE PULSE
R
10
JA
T
FDS6898A Rev C (W)
V
f = 1MHz
A
=135°C/W
GS
= 25°C
JA
1
= 0 V
JA
(t)
/ t
2
1000
100
20