FDS6898AZ Fairchild Semiconductor, FDS6898AZ Datasheet
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FDS6898AZ
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FDS6898AZ Summary of contents
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... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ October 2001 4.5 V DS(ON 2.5 V DS(ON Ratings Units 9 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6898AZ Rev C (W) ...
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... GS GEN 9 4 1.3 A (Note determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV –10 0.5 1 1.5 V –3.5 mV 1821 pF 440 pF 208 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6898AZ Rev C (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 4.0V 4. DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6898AZ Rev C ( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 FDS6898AZ Rev C (W) 20 100 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...