FDS6912 Fairchild Semiconductor, FDS6912 Datasheet
FDS6912
Manufacturer Part Number
FDS6912
Description
MOSFET N-CH DUAL PWM OPT 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Specifications of FDS6912
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
740pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Dc
0452
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6912
Manufacturer:
FSC
Quantity:
5 550
Part Number:
FDS6912
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912-NL
Manufacturer:
FSC
Quantity:
68 500
Company:
Part Number:
FDS6912-NL
Manufacturer:
SIEMENS
Quantity:
5 000
Part Number:
FDS6912-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912A
Manufacturer:
FAIRCHIL
Quantity:
29 332
Company:
Part Number:
FDS6912A
Manufacturer:
FSC
Quantity:
50 000
Part Number:
FDS6912A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6912A
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6912A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6912A
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
6 A, 30 V.
Fast switching speed
Low gate charge
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
1.6
1.0
0.9
30
20
78
40
6
20
= 28 m
= 35 m
4
3
2
1
@ V
@ V
July 2003
GS
GS
FDS6912A Rev D(W)
2500 units
Quantity
= 10 V
= 4.5 V
Units
C/W
C/W
W
V
V
A
C
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FDS6912 Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ July 2003 DS(ON 4.5 V DS(ON Ratings Units 1.6 1.0 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6912A Rev D(W) ...
Page 2
... 100 A/µ determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV 100 1 1 –4.5 mV 575 pF 145 2 5.8 8.1 nC 1.7 nC 2.1 nC 1.3 A 0.75 1 135°C/W when mounted on a minimum mounting pad. FDS6912A Rev D(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3.5V GS 4.0 4.5V 5.0 6.0V 10. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6912A Rev D( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 1000 FDS6912A Rev D(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...