FDS6990A Fairchild Semiconductor, FDS6990A Datasheet - Page 4

• Manufacturer Part Number: FDS6990A
• Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6990A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Input Capacitance (ciss) @ Vds: 1235pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990ATR

Typical Characteristics
0.01
100
0.1
10
0.001
Figure 9. Maximum Safe Operating Area.
10
1
0.01
0.01
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
0.1
0
0.0001
1
R
SINGLE PULSE
R
I
DS(ON)
D
V
JA
T
GS
= 7.5A
A
= 135
= 25
= 10.0V
LIMIT
D = 0.5
o
o
0.2
5
C
C/W
0.1
0.1
V
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
SINGLE PULSE
Q
0.001
g
, GATE CHARGE (nC)
10
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
1
DC
Figure 11. Transient Thermal Response Curve.
10s
V
DS
15
1s
= 10V
100ms
0.01
20V
10ms
10
1ms
20
100 s
15V
100
0.1
25
t
1
, TIME (sec)
2000
1600
1200
800
400
50
40
30
20
10
0
0
0.001
Figure 8. Capacitance Characteristics.
0
1
C
Figure 10. Single Pulse Maximum
rss
0.01
V
DS
Power Dissipation.
5
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
10
0.1
t
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
R
J
R
C
- T
JA
1
iss
JA
(t) = r(t) * R
100
A
t
= 135
1
= P * R
t
2
o
15
SINGLE PULSE
R
C/W
JA
10
T
JA
1
A
FDS6990A Rev D(W)
= 135°C/W
JA
(t)
/ t
f = 1 MHz
V
= 25°C
GS
2
= 0 V
1000
100
20