FDS9958 Fairchild Semiconductor, FDS9958 Datasheet - Page 4

• Manufacturer Part Number: FDS9958
• Description: MOSFET P-CH 60V DUAL SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9958

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 1020pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.105 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9958TR

©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Typical Characteristics
0.01
0.1
10
20
10
1
4
3
2
1
Figure 7.
0.01
8
6
4
2
0
0.1
0
THIS AREA IS
LIMITED BY r
Figure 9.
I
D
Figure 11. Forward Bias Safe
= -2.9A
-V
Switching Capability
SINGLE PULSE
T
R
T
DS
V
Gate Charge Characteristics
J
A
θ
DD
t
0.1
, DRAIN to SOURCE VOLTAGE (V)
JA
AV
= MAX RATED
= 25
5
DS(on)
Operating Area
Unclamped Inductive
= -30V
, TIME IN AVALANCHE(ms)
= 135
1
Q
o
g
C
, GATE CHARGE(nC)
o
T
V
C/W
V
J
DD
DD
= 125
= -40V
= -20V
10
1
o
C
10
T
J
= 25°C unless otherwise noted
T
J
10
15
= 25
o
C
100
100ms
1s
10s
0.1ms
1ms
10ms
DC
200
100
20
4
2000
1000
Figure 10.
100
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
200
0.5
10
10
1
Figure 12.
0.1
25
Current vs Ambient Temperature
10
Figure 8.
-3
f = 1MHz
V
R
GS
θ
JA
= 0V
= 78
10
-V
V
Power Dissipation
Maximum Continuous Drain
to Source Voltage
50
GS
DS
-2
T
o
A
Single Pulse Maximum
, DRAIN TO SOURCE VOLTAGE (V)
V
C/W
Capacitance vs Drain
,
= -10V
GS
AMBIENT TEMPERATURE (
t, PULSE WIDTH (s)
= -4.5V
10
1
-1
75
10
0
100
10
C
C
C
SINGLE PULSE
R
T
1
10
oss
iss
rss
A
θ
JA
= 25
V
o
www.fairchildsemi.com
= 135
GS
C )
125
o
C
10
= -10V
o
2
C/W
10
150
60
3