FDS6900AS Fairchild Semiconductor, FDS6900AS Datasheet - Page 3

MOSFET N-CH DUAL 30V 8SOIC

FDS6900AS

Manufacturer Part Number
FDS6900AS
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6900AS

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 21 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.9 A, 8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Device #1 FAN5009M
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
TMCL1
Device #2 FAN5109M
Package:
#Leads:
Precondition Description:
P/C
X
X
X
-1
-1
-1
P/C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
0V
Conditions
Readpoints
TP1
264
168
100
TP2
500
500
TP3
1000
Read-
points
Samples
A
45
77
77
Sample
A
0
Pg. 3

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