FDS4935BZ Fairchild Semiconductor, FDS4935BZ Datasheet

FDS4935BZ

Manufacturer Part Number

FDS4935BZ

Description

IC MOSFET P-CH DUAL 30V 8-SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDS4935BZ.pdf (5 pages)

Specifications of FDS4935BZ

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

22 mOhm @ 6.9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

6.9A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

40nC @ 10V

Input Capacitance (ciss) @ Vds

1360pF @ 15V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.022Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±25V

Drain Current (max)

6.9A

Power Dissipation

1.6W

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOIC N

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.022 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

22 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 25 V

Continuous Drain Current

6.9 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Module Configuration

Dual

Continuous Drain Current Id

-6.9A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

22mohm

Rds(on) Test Voltage Vgs

-10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS4935BZTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS4935BZ

Manufacturer:

Fairchild Semiconductor

Quantity:

27 910

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS4935BZ

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

FDS4935BZ

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS4935BZ-NL

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
Download datasheet (159Kb)

FDS4935BZ

Dual 30 Volt P-Channel PowerTrench MOSFET

General Description

This

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

2006 Fairchild Semiconductor Corporation

DS(ON)

DS\

, T

Device Marking

STG

FDS4935BZ

P-Channel

specifications.

SO-8

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

MOSFET

Pin 1

SO-8

– Continuous

– Pulsed

FDS4935BZ

has

Device

Parameter

been

designed

=25

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1c)

(Note 1)

Features

–6.9 A, –30 V. R

Extended V

ESD protection diode (note 3)

High performance trench technology for extremely

High power and current handling capability

low R

DS(ON)

GSS

Tape width

range (–25V) for battery applications

–55 to +150

12mm

Ratings

DS(ON)

–6.9

–30

+25

–50

1.6

1.0

0.9

= 22 m

= 35 m

@ V

September 2006

FDS4935BZ Rev B1 (W)

= –10 V

= – 4.5 V

2500 units

Quantity

Units

C/W

Related parts for FDS4935BZ

FDS4935BZ Summary of contents

Page 1

... Reel Size 13’’ September 2006 = –10 V DS(ON – 4.5 V DS(ON) GS range (–25V) for battery applications GSS Ratings Units –30 V +25 V –6.9 A –50 1.6 W 1.0 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS4935BZ Rev B1 (W) tm ...

Page 2

... CA b) 125°C/W when 2 mounted on a .04 in pad copper Min Typ Max Units – mV/ C – +10 –1 –1.9 –3 V – 1360 pF 240 pF 200 108 –2.1 A –0.8 –1 135°C/W when mounted on a minimum pad. FDS4935BZ Rev B1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -8.0V -10V DRAIN CURRENT ( -4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS4935BZ Rev B1 ( 1.6 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS4935BZ Rev B1 (W) 30 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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