FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 5

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Typical Characteristics (Q1 N-Channel)
4.5
3.6
2.7
1.8
0.9
0.0
Figure 9.
4
3
2
1
0
1000
Figure 7.
25
100
0.0
0.1
Current vs Ambient Temperature
10
R
10
1
I
θ
D
JA
-5
= 3.2A
= 89
Maximum Continuous Drain
50
o
0.5
T
C/W
Gate Charge Characteristics
A
, AMBIENT TEMPERATURE
V
GS
V
Q
DD
= 4.5V
10
g
, GATE CHARGE(nC)
= 10V
-4
75
1.0
V
Figure 11. Single Pulse Maximum Power Dissipation
DD
= 5V
V
100
V
GS
1.5
GS
10
= 2.5V
V
= 4.5V
-3
DD
= 15V
(
o
C
125
)
2.0
10
t, PULSE WIDTH (s)
-2
150
2.5
T
J
= 25°C unless otherwise noted
5
10
-1
0.01
600
100
0.1
10
20
10
1
0.1
0.1
Figure 8.
THIS AREA IS
LIMITED BY r
10
f = 1MHz
V
Figure 10. Forward Bias Safe
GS
0
= 0V
V
V
DS
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN to SOURCE VOLTAGE (V)
Capacitance vs Drain
Operating Area
SINGLE PULSE
T
R
T
DS(on)
J
A
θ
JA
= MAX RATED
= 25
= 182
10
1
o
1
C
1
o
C/W
10
C
C
C
SINGLE PULSE
T
A
iss
oss
rss
2
= 25
10
o
www.fairchildsemi.com
C
10
100ms
100
10
10ms
10s
1ms
DC
1s
10
µ
µ
s
20
3
s
60