FDS9953A Fairchild Semiconductor, FDS9953A Datasheet - Page 5

• Manufacturer Part Number: FDS9953A
• Description: MOSFET P-CH DUAL 30V 2.9A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9953A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 185pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
SINGLE PULSE
R
=-1.0 A
0.1
DS(ON)
V
JA
0.0001
T
1
GS
A
= 135
= 25
= -10V
LIMIT
D = 0.5
1
o
o
C/W
C
0.2
-V
0.1
DS
0.05
0.02
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
Q
1
0.01
g
, GATE CHARGE (nC)
2
0.001
DC
10s
Figure 11. Transient Thermal Response Curve.
V
1s
DS
100ms
3
= -5V
10
10ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
-15V
0.01
1ms
4
100µs
-10V
100
5
0.1
300
250
200
150
100
50
40
30
20
10
50
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
5
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
C
t
C
10
1
OSS
RSS
, TIME (sec)
ISS
15
1
P(pk)
Duty Cycle, D = t
20
T
R
R
J
JA
- T
SINGLE PULSE
100
R
JA
(t) = r(t) + R
JA
T
A
t
= 135 °C/W
A
1
f = 1MHz
V
10
= 135°C/W
= P * R
t
GS
= 25°C
FDS9953A Rev B(W)
2
25
= 0 V
JA
1
JA
(t)
/ t
100
2
30
1000