FDC6318P Fairchild Semiconductor, FDC6318P Datasheet
FDC6318P
Specifications of FDC6318P
Available stocks
Related parts for FDC6318P
FDC6318P Summary of contents
Page 1
... December 2001 = 90 mΩ –4.5 V DS(ON 125 mΩ –2.5 V DS(ON 200 mΩ –1.8 V DS(ON package: small footprint (72 Ratings Units –12 V ±8 V –2.5 A –7 0.96 W 0.9 0.7 –55 to +150 °C °C/W 130 °C/W 60 Tape width Quantity 12mm 3000 units FDC6318P Rev D (W) ...
Page 2
... Typ Max Units –12 V –2.9 mV/°C –1 µA 100 nA –100 nA –0.4 –0.7 –1.5 V 2.3 mV/° mΩ 93 125 135 200 85 120 – 455 pF 194 pF 134 5 1.1 nC 1.3 nC –0.8 A –0.7 –1.2 V (Note 2) c) 180°C/W when mounted on a minimum pad. FDC6318P Rev D (W) ...
Page 3
... C 1 0.1 0.01 0.001 2 2.5 0 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6318P Rev D ( ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 130°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 130 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC6318P Rev D (W) 12 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...