FDS8333C Fairchild Semiconductor, FDS8333C Datasheet

FDS8333C

Manufacturer Part Number

FDS8333C

Description

MOSFET N/P-CH 30V 4.1/3.4A 8SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS8333C.pdf (8 pages)

Specifications of FDS8333C

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

80 mOhm @ 4.1A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

4.1A, 3.4A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

6.6nC @ 4.5V

Input Capacitance (ciss) @ Vds

282pF @ 10V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

0.08 Ohm @ 10 V @ N Channel

Forward Transconductance Gfs (max / Min)

5 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 16 V @ N Channel or +/- 20 V @ P Channel

Continuous Drain Current

4.1 A @ N Channel or 3.4 A @ P Channel

Power Dissipation

2000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDS8333C

Manufacturer:

STM

Quantity:

7 013

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS8333C

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Euro Chip Distribution

Part Number:

FDS8333C

Quantity:

5 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDS8333C-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 8
Download datasheet (135Kb)

2002 Fairchild Semiconductor Corporation

FDS8333C

30V N & P-Channel PowerTrench MOSFETs

General Description

These

produced using Fairchild Semiconductor’s

advanced PowerTrench process that has been

especially

resistance and yet maintain superior switching

performance.

These devices are well suited for low voltage

and battery powered applications where low

in-line power loss and fast switching are

required.

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

J C

Device Marking

STG

FDS8333C

SO-8

tailored

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

P-Channel

Pin 1

minimize

SO-8

MOSFETs

– Continuous

– Pulsed

FDS8333C

Device

Parameter

on-state

are

=25

C unless otherwise noted

Reel Size

7’’

Features

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Low gate charge

High performance trench technology for extremely

low R

High power and handling capability in a widely used

surface mount package.

4.1 A, 30V. R

–3.4 A, 30V. R

DS(ON)

4.1

Tape width

–55 to +150

12mm

DS(ON)

1.6

0.9

= 80 m @ V

= 130 m @ V

= 200 m @ V

–3.4

–30

–20

August 2002

2500 units

Quantity

FDS8333C Rev C (W)

= 10 V

= 4.5 V

= –10 V

= –4.5 V

Units

C/W

Related parts for FDS8333C

FDS8333C Summary of contents

Page 1

... Reel Size 7’’ August 2002 = DS(ON 130 4.5 V DS(ON 130 –10 V DS(ON 200 –4.5 V DS(ON Units 30 – 4.1 –3 – 0.9 –55 to +150 C 78 C/W 40 Tape width Quantity 12mm 2500 units FDS8333C Rev C (W) ...

... Typ Max Units 30 V –30 25 mV/ C – –1 nA 100 nA 100 1 1 –1 –1.8 –3 –4.2 mV 130 81 145 103 105 130 200 167 220 147 10 A – 282 pF 185 2.3 –9 4.7 6.6 nC 4.1 5.7 0.9 nC 0.8 0.6 nC 0.4 FDS8333C Rev C (W) ...

Page 3

... A/µ –3 100 A/µ determined by the user's board design 125°C/W when mounted 0.02 in pad copper Min Typ Max Units 0.8 1.2 (Note 2) V 0.8 –1.2 (Note 2) 16.3 nS 14.5 26.7 nC 21.1 c) 135°C/W when mounted on a minimum pad. FDS8333C Rev C (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS8333C Rev C ( 1.2 ...

Page 5

... DS 10V 15V 300 200 100 C RSS Figure 8. Capacitance Characteristics 100 s 1ms 10ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. FDS8333C Rev C (W) 30 1000 ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.0V -6.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS8333C Rev C ( 1.4 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS8333C Rev C (W) 30 1000 ...

Page 8

CROSSVOLT â â â â ...

Related keywords

fds8333c
fds8333
FDS8333C datasheet
FDS8333C data sheet
FDS8333C pdf datasheet
FDS8333C component
FDS8333C part
FDS8333C distributor
FDS8333C RoHS
FDS8333C datasheet download