This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Optimized for use in battery protection circuits Low gate charge =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ July 2003 4.5 V DS(ON 2.5 V. DS(ON Ratings Units 6 1.6 1 0.9 –55 to +150 C 78 C/W 40 Tape width Quantity 12mm 2500 units FDS9926A Rev E (W) ...
... CA b) 125°/W when mounted pad copper Min Typ Max Units mV 100 0.6 1 1.5 V –3 mV 650 pF 150 1 6 1.2 nC 1.7 nC 0.73 1 135°/W when mounted on a minimum pad. Scale letter size paper FDS9926A Rev E (W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4.0V 4. DIRAIN CURRENT ( 3.25A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS9926A Rev E ( 1.2 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS9926A Rev E (W) 20 100 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...