FDC6306P Fairchild Semiconductor, FDC6306P Datasheet - Page 3

• Manufacturer Part Number: FDC6306P
• Description: MOSFET P-CHAN DUAL 20V SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6306P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 441pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.17 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -1.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 127mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6306PTR

Typical Characteristics
12
10
8
6
4
2
0
10
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
0
1
0
-50
Figure 5. Transfer Characteristics.
Figure 1. On-Region Characteristics.
V
DS
Figure 3. On-Resistance Variation
V
I = -1.9A
D
GS
= -5V
-25
= -4.5V
V
1
1
GS
-V
-V
= -4.5V
GS
DS
with Temperature.
T , JUNCTION T EMPERAT URE (°C)
0
J
, DRAIN-SOURCE VOLTAG E (V)
, GATE T O SOURCE VOLTAGE (V)
2
25
2
-4.0V
T = -55°C
J
50
-3.5V
3
3
75
25°C
-3.0V
1 25° C
100
4
-2.5V
4
125
-2.0V
5
150
5
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
1.8
1.6
1.4
1.2
0.8
0
0.01
2
1
1
0.1
10
0
1
with Drain Current and Gate Voltage.
Figure 6. Body Diode Forward Voltage
0
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
with Gate-to-Source Voltage.
V
GS
Variation with Source Current
= 0V
0.2
= -2 .5 V
-V
2
-V
SD
2
GS
, BODY DIODE FORWARD VOLT AGE (V)
and Temperature.
, GATE TO SOURCE VOLT AG E (V)
T = 125°C
0.4
- I
J
D
-3.0V
, DRAIN CURRENT (A)
4
0.6
-3.5V
25 °C
3
-55°C
-4.0V
0.8
6
-4.5V
1
4
8
T = 1 25° C
I = -1A
D
J
1.2
25° C
FDC6306P Rev. C
10
1.4
5