FDY4000CZ Fairchild Semiconductor, FDY4000CZ Datasheet

MOSFET N/P-CH 20V 600/350 SC89-6

FDY4000CZ

Manufacturer Part Number
FDY4000CZ
Description
MOSFET N/P-CH 20V 600/350 SC89-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY4000CZ

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA, 350mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-666
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
1.8 S, 1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V @ N Channel or +/- 8 V @ P Channel
Continuous Drain Current
0.6 A @ N Channel or 0.35 A @ P Channel
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY4000CZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY4000CZ
Manufacturer:
Fairchild Semiconductor
Quantity:
72 687
Part Number:
FDY4000CZ
Manufacturer:
IR
Quantity:
6 700
Part Number:
FDY4000CZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDY4000CZ
Quantity:
400
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
FDY4000CZ
Complementary N & P-Channel PowerTrench
MOSFET
Features
Q1:
„ Max r
„ Max r
„ Max r
Q2:
„ Max r
„ Max r
„ Max r
„ ESD protection diode (note 3)
„ RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
J
DS
GS
D
TJA
TJA
, T
Symbol
Device Marking
STG
N-Channel
P-Channel
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
E
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation (Steady State)
Operating and Storage Jaunting Temperature Range
0.7: at V
0.85: at V
1.25: at V
1.2: at V
1.6: at V
2.7: at V
1
2
GS
GS
GS
GS
3
GS
GS
= 4.5V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
-Pulsed
FDY4000CZ
= 2.5V, I
= 1.8V, I
Device
6
D
D
D
D
D
D
= 600mA
= -350mA
= -300mA
= -150mA
5
= 500mA
=150 mA
4
Parameter
T
C
= 25°C unless otherwise noted
Package
SC89-6
1
General Description
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench
specify the r
Applications
„ Level shifting
„ Power Supply Converter Circuits
„ Load/Power Switching Cell Phones, Pagers
®
process to optimize the r
D1
G2
S2
Reel Size
DS(ON)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1b)
4
5
6
7”
@ V
GS
1000
= 1.8V.
±12
600
Tape Width
Q1
20
-55 to 150
8mm
625
446
200
280
DS(ON)
3
2
1
November 2009
®
-1000
-350
-20
@ V
Q2
±8
www.fairchildsemi.com
D2
G1
S1
GS
3000units
Quantity
= 2.5V and
Units
°C/W
mW
mA
°C
V
V

Related parts for FDY4000CZ

FDY4000CZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device E FDY4000CZ ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev. B2 General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power = 600mA D ® Trench process to optimize the r ...

Page 2

... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller”Charge gd ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev 25°C unless otherwise noted J Test Conditions I = 250PA -250PA 250PA, referenced to 25° -250PA, referenced to 25° ...

Page 3

... Scale 1:1 on letter size paper 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev 25°C unless otherwise noted J Test Conditions ...

Page 4

... Figure 3. Normalized on-Resistance vs. Temperature 1 -55 A 1.2 0.9 0.6 0.3 0 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev. B2 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0. Figure 2. 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 ...

Page 5

... SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev. B2 100 0.6 ...

Page 6

... Figure 14. Normalized on-Resistance vs. Temperature -5V DS 0.8 0.6 0 125 C A 0.2 0 0 GATE TO SOURCE VOLTAGE (V) GS Figure 16. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev 2.2 1.8 -2.0V 1.4 -1.8V 1 0.6 0 1.5 2 Figure 13. 2 1.75 1.5 1.25 1 0.75 0.5 0. 100 ...

Page 7

... SINGLE PULSE 0.01 0.0001 0.001 Figure 22. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev. B2 150 125 100 -15V rss 0 2 2.5 0 Figure 19 ...

Page 8

... BOTTOM VIEW NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DRAWING CONFORMS TO ASME Y14.5M-1994 D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. MAD06ArevA ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev 0.30 0.15 B 1.60 0 0.50 1.00 0.60 SEE DETAIL A 0 ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDY4000CZ Rev. B2 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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