FDS6982 Fairchild Semiconductor, FDS6982 Datasheet

MOSFET N-CH DUAL 30V 8SOIC

FDS6982

Manufacturer Part Number
FDS6982
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS6982

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
760pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
50 S, 40 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.6 A to 6.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.2V
Rohs Compliant
Yes
Fall Time
7 ns, 18 ns
Rise Time
14 ns, 11 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6982TR

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Final PCN Q3073705 is an addendum for Final PCN Q1070805.
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2007/12/10
Earliest Year/Work Week of Changed Product: 0750
Change Type Description: Bond Wire Material Composition
Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.
Products will be shipped for an interim period of time with Au wire until the inventory is
depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949
certified.
Qual/REL Plan Numbers : Q20070231
Qualification :
This change will have no impact on any of the electrical parameters of the products
involved. The product test conditions, test limits and performance will remain
unchanged. Products will be built with the same level of quality and reliability as with
the existing products. The devices for qualification and qualification requirements are
defined in the table below.
Results/Discussion
Test: (Autoclave)
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2007/10/12
Date Created : 2007/09/11
PCN# : Q3073705
Pg. 1

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FDS6982 Summary of contents

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... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

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