FDMC6890NZ Fairchild Semiconductor, FDMC6890NZ Datasheet

MOSFET N-CH DUAL 20V 4A POWER33

FDMC6890NZ

Manufacturer Part Number
FDMC6890NZ
Description
MOSFET N-CH DUAL 20V 4A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC6890NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
3.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
1.92W
Mounting Type
Surface Mount
Package / Case
6-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC6890NZTR
©2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
FDMC6890NZ
Dual N-Channel PowerTrench
20V, 4A, Q1:68mΩ, Q2:100mΩ
Features
Q1: N-Channel
Q2: N-Channel
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Low gate Charge
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
6890N
G1
= 68mΩ at V
= 100mΩ at V
= 100mΩ at V
= 150mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation (Steady State) Q1
Power Dissipation (Steady State) Q2
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
S1 D1/S2 D2
D1/S2
Up
Power 33
G2
GS
GS
GS
GS
= 4.5V, I
FDMC6890NZ
= 2.5V, I
= 4.5V, I
= 2.5V, I
-Continuous
-Pulsed
Device
D
D
D
D
= 4A
= 3A
= 4A
= 2A
T
S1
A
G1 D1/S2 G2
Bottom
= 25°C unless otherwise noted
D1
D1/S2 D2
Parameter
D2
Power 33
Package
Q1
Q2
1
®
General Description
FDMC6890NZ is a compact single package solution for DC to
DC converters
characteristics. Inside the Power 33 package features two
N-channel MOSFETs with low on-state resistance and low gate
charge to
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Application
DC - DC Conversion
MOSFET
Reel Size
maximize the power conversion and switching
7inch
D1/S2
S1
D2
(Note 1a)
(Note 1a)
with
4
5
6
excellent
Tape Width
±12
Q1
20
8mm
-55 to +150
1.92
1.78
thermal and switching
65
70
10
4
3
2
1
October 2006
D1/S2
G2
G1
±12
Q2
20
www.fairchildsemi.com
3000 units
Quantity
Units
°C/W
°C
W
V
V
A
tm

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FDMC6890NZ Summary of contents

Page 1

... Device Marking Device 6890N FDMC6890NZ ©2006 Fairchild Semiconductor Corporation FDMC6890NZ Rev.C ® MOSFET General Description FDMC6890NZ is a compact single package solution for converters = 4A D characteristics. Inside the Power 33 package features two = 3A D N-channel MOSFETs with low on-state resistance and low gate charge to efficiency ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge at 4.5V g(TOT) Q Total Gate Charge at 2V g(2) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd FDMC6890NZ Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° 16V ...

Page 3

... SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC6890NZ Rev 25°C unless otherwise noted J Test Conditions = 0V 4A, di/dt = 100A pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material 65° ...

Page 4

... JUNCTION TEMPERATURE J Figure 3. Normalized On - Resistance vs Junction Temperature 9 µ PULSE DURATION = DUTY CYCLE = 0.5%MAX 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC6890NZ Rev 25°C unless otherwise noted J PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 2.0 2.5 3.0 75 100 125 150 150 ...

Page 5

... Gate Charge Characteristics 125 0.01 0 TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 100 V = 10V SINGLE PULSE 0 Figure 11. FDMC6890NZ Rev 25°C unless otherwise noted 10V 12V DD 2.0 2.5 3 0.1 0. PULSE WIDTH (s) Single Pulse Maximum Power Dissipation 5 400 C iss 100 C oss C rss f = 1MHz ...

Page 6

... Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.006 - FDMC6890NZ Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com 3 10 ...

Page 7

... Figure 15. Normalized On Resistance vs Junction Temperature 6 PULSE DURATION = 80 µ DUTY CYCLE = 0.5%MAX 0.0 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics FDMC6890NZ Rev.C PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 1.8V GS 1.5 2.0 2.5 Figure 14. Normalized on-Resistance vS Drain 75 100 125 150 ...

Page 8

... GATE CHARGE(nC) g Figure 19. Gate Charge Characteristics 125 1E-3 0. TIME IN AVALANCHE(ms) AV Figure 21. Unclamped Inductive Switching Capability 200 100 V = 10V GS 10 SINGLE PULSE FDMC6890NZ Rev 12V DD 1.2 1 PULSE WIDTH (s) Figure 23. Single Pulse Maximum Power Dissipation 8 400 100 f = 1MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 20 ...

Page 9

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E FDMC6890NZ Rev RECTANGULAR PULSE DURATION (s) Figure 24. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com 3 10 ...

Page 10

... FDMC6890NZ Rev.C 10 www.fairchildsemi.com ...

Page 11

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDMC6890NZ Rev. C OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...

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