FDS8958B Fairchild Semiconductor, FDS8958B Datasheet - Page 4

• Manufacturer Part Number: FDS8958B
• Description: MOSFET N/P-CH 30V TRENCH 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8958B

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.026 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 6.4 A @ N Channel or 4.5 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958BTR

FDS8958B Rev.B
©2008 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
30
24
18
12
30
25
20
15
10
5
0
6
0
Figure 3. Normalized On Resistance
-75
Figure 1.
0
1
Figure 5. Transfer Characteristics
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
GS
DS
-50
= 6.4 A
= 5 V
= 10 V
vs Junction Temperature
0.5
V
T
V
2
-25
DS
J
GS
,
T
On Region Characteristics
,
JUNCTION TEMPERATURE (
J
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DRAIN TO SOURCE VOLTAGE (V)
= 125
1.0
0
o
3
C
25
µ
V
V
V
s
1.5
GS
GS
GS
T
J
= 10 V
= 6 V
= 4.5 V
50
= -55
T
J
4
= 25
o
2.0
75
C
µ
o
s
C
o
100 125 150
C )
V
5
V
GS
2.5
GS
= 4 V
= 3.5 V
3.0
6
T
J
4
= 25 °C unless otherwise noted
0.01
0.1
3.0
2.5
2.0
1.5
1.0
0.5
30
10
75
60
45
30
15
1
0.2
Figure 2.
Figure 4.
2
0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
T
= 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
V
= 0 V
T
0.4
= 125
SD
J
, BODY DIODE FORWARD VOLTAGE (V)
= 25
V
6
Normalized On-Resistance
GS
On-Resistance vs Gate to
I
4
D
Source Voltage
o
,
Source to Drain Diode
o
,
C
C
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.6
12
V
GS
0.8
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
= 4 V
µ
s
I
D
T
18
J
= 3.2 A
= -55
T
1.0
T
J
J
= 125
= 25
o
V
C
8
GS
o
o
V
www.fairchildsemi.com
24
C
C
= 4.5 V
GS
V
1.2
GS
= 6 V
= 10 V
µ
s
1.4
10
30