SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4563DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4563DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A, 6.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 8 A @ N Channel or 6.6 A @ P Channel
• Power Dissipation: 2000 mW
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4563DY-T1-E3TR

Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.030
0.027
0.024
0.021
0.018
0.015
10
20
16
12
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
0.0
0
0
I
D
= 5 A
11
0.6
4
V
DS
Q
Output Characteristics
V
V
g
GS
- Drain-to-Source Voltage (V)
DS
I
D
- Total Gate Charge (nC)
V
V
GS
= 20 V
= 10 thru 4 V
GS
- Drain Current (A)
Gate Charge
22
1.2
8
= 10 V
= 4.5 V
V
DS
V
DS
= 10 V
= 30 V
12
33
1.8
3 V
16
44
2.4
20
55
3.0
3500
2800
2100
1400
700
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
- 25
rss
= 5 A
V
0.6
V
8
DS
T
GS
Transfer Characteristics
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
iss
Capacitance
25
1.2
16
T
C
S09-0393-Rev. C, 09-Mar-09
= 125 °C
25 °C
C
50
oss
Document Number: 73513
1.8
24
75
V
GS
100
= 10 V
V
GS
2.4
32
- 55 °C
= 4.5 V
125
150
3.0
40