SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 6
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4563DY-T1-E3
Manufacturer Part Number
SI4563DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A, 6.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
8 A @ N Channel or 6.6 A @ P Channel
Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4563DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
12
10
8
6
4
2
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
S09-0393-Rev. C, 09-Mar-09
75
Document Number: 73513
100
125
150