SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 2
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4563DY-T1-E3
Manufacturer Part Number
SI4563DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A, 6.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
8 A @ N Channel or 6.6 A @ P Channel
Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4563DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4563DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
Q
g
R
oss
DS
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
DS
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 20 V, V
= - 20 V, V
= - 40 V, V
V
V
= - 20 V, V
= 40 V, V
V
V
V
V
V
= 20 V, V
= 20 V, V
V
V
V
= 20 V, V
V
V
DS
DS
GS
DS
DS
DS
V
GS
V
GS
V
GS
DS
DS
DS
GS
DS
GS
= V
= - 5 V, V
= 0 V, V
= 0 V, I
= V
= - 40 V, V
= - 4.5 V, I
II
= 0 V, I
= - 10 V, I
= - 15 V, I
I
= 40 V, V
= 5 V, V
I
D
I
= 4.5 V, I
D
= 10 V, I
= 15 V, I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
Test Conditions
= - 250 µA
GS
= - 250 µA
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
GS
GS
, I
, I
D
= - 4.5 V, I
D
= 0 V, T
= - 10 V, I
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
= 4.5 V I
= 10 V, I
= 0 V, f = 1 MHz
GS
GS
= - 250 µA
= - 250 µA
= 250 µA
GS
= 250 µA
D
D
D
D
D
D
GS
= ± 16 V
= 10 V
= - 10 V
= 5 A
= - 5 A
= 5 A
= - 5 A
= 4 A
= - 4 A
= 0 V
= 0 V
J
J
= 55 °C
D
D
= 55 °C
D
D
= 5 A
= 5 A
= - 5 A
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.8
- 40
- 20
0.8
40
20
S09-0393-Rev. C, 09-Mar-09
0.013
0.015
Typ.
0.020
0.025
2390
2120
- 4.8
25.5
11.7
- 40
270
310
165
235
Document Number: 73513
4.0
5.5
5.1
9.7
2.6
5.8
40
23
18
56
52
26
a
0.016
0.025
0.019
0.032
Max.
- 100
- 2.2
- 10
100
2.0
4.0
9.0
- 1
10
85
80
40
39
1
mV/°C
Unit
nA
µA
nC
pF
Ω
Ω
V
V
A
S