SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet - Page 3
![MOSFET N/P-CH 40V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4563DY-T1-E3
Manufacturer Part Number
SI4563DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A, 6.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
8 A @ N Channel or 6.6 A @ P Channel
Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4563DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
r
f
f
rr
I
F
I
I
F
D
I
= - 2 A, dI/dt = - 100 A/µs, T
D
I
= 2 A, dI/dt = 100 A/µs, T
I
≅ - 5 A, V
D
D
≅ - 5 A, V
≅ 5 A, V
≅ 5 A, V
V
V
V
V
DD
DD
DD
DD
= - 20 V, R
= - 20 V, R
GEN
= 20 V, R
= 20 V, R
GEN
T
I
N-Channel
P-Channel
N-Channel
P-Channel
N-Channel
P-Channel
GEN
GEN
I
S
Test Conditions
S
C
= - 1.6 A
= 1.5 A
= 25 °C
= - 4.5 V, R
= 4.5 V, R
= 10 V, R
= - 10 V, R
L
L
L
L
= 4 Ω
= 4 Ω
= 4 Ω
= 4 Ω
g
g
J
g
g
J
= 1 Ω
= 1 Ω
= 25 °C
= 16 Ω
= 25 °C
= 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Vishay Siliconix
- 0.72
Typ.
0.69
117
15
13
20
16
56
75
10
68
88
33
93
62
80
19
69
62
49
62
42
26
19
36
30
a
Si4563DY
www.vishay.com
Max.
- 2.7
- 1.2
- 20
115
105
135
180
140
120
105
2.7
1.2
23
20
30
25
85
15
50
95
30
20
95
75
95
65
Unit
nC
ns
ns
ns
A
V
3