SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet - Page 7

MOSFT DL NCH 30V 10.8/7.2A 8SOIC

SI4972DY-T1-E3

Manufacturer Part Number
SI4972DY-T1-E3
Description
MOSFT DL NCH 30V 10.8/7.2A 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4972DY-T1-E3

Transistor Polarity
Dual N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.5 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.8A, 7.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A @ Channel 1 or 6.4 A @ Channel 2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8.7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4972DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
0.001
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.02
Duty Cycle = 0.5
0.5
0.1
0.05
0.2
Duty Cycle = 0.5
0.05
0.02
0.1
Single Pulse
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient (Ch 1)
10
Normalized Thermal Transient Impedance, Junction-to-Case (Ch 1)
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
= P
t
2
Vishay Siliconix
DM
100
Z
thJA
thJA
t
t
1
2
Si4972DY
(t)
= 120 °C/W
www.vishay.com
1000
10
7

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