SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet - Page 10

MOSFT DL NCH 30V 10.8/7.2A 8SOIC

SI4972DY-T1-E3

Manufacturer Part Number
SI4972DY-T1-E3
Description
MOSFT DL NCH 30V 10.8/7.2A 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4972DY-T1-E3

Transistor Polarity
Dual N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.5 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.8A, 7.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A @ Channel 1 or 6.4 A @ Channel 2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8.7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4972DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4972DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
10
1.5
1.2
0.9
0.6
0.3
0.0
8
6
4
2
0
0
0
Power Derating, Junction-to-Ambient (Ch 2)
25
25
D
is based on T
Current Derating* (Ch 2)
T
T
A
C
- Ambient Temperature (°C)
50
- Case Temperature (°C)
50
J(max)
75
75
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
100
100
125
125
150
150
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot (Ch 2)
25
T
C
- Case Temperature (°C)
50
75
S09-0138-Rev. D, 02-Feb-09
Document Number: 73849
100
125
150

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