SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4972DY-T1-E3
• Description: MOSFT DL NCH 30V 10.8/7.2A 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4972DY-T1-E3

• Transistor Polarity: Dual N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.8A, 7.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0145 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A @ Channel 1 or 6.4 A @ Channel 2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 120mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4972DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.6
0.3
0.0
0.1
10
1
0.00
- 50
Source-Drain Diode Forward Voltage (Ch 1)
I
D
I
D
= 5 mA
- 25
= 250 µA
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage (Ch 1)
T
T
J
0.4
J
= 150 °C
- Temperature (°C)
25
0.6
50
75
0.8
0.01
100
0.1
10
Safe Operating Area, Junction-to-Ambient (Ch 1)
1
100
0.1
T
* V
J
Limited by R
= 25 °C
1.0
GS
125
V
minimum V
DS
1.2
150
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
A
*
GS
= 25 °C
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.001
0.001
is specified
0
Single Pulse Power, Junction-to-Ambient (Ch 1)
On-Resistance vs. Gate-to-Source (Ch 1)
1 ms
10 ms
100 ms
1
1 s
10 s
DC
2
V
100
GS
0.01
3
- Gate-to-Source Voltage (V)
4
T
T
Time (s)
A
A
= 25 °C
5
= 125 °C
0.1
Vishay Siliconix
6
7
Si4972DY
I
D
= 6 A
1
www.vishay.com
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9
10
10
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