SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI4972DY-T1-E3
• Description: MOSFT DL NCH 30V 10.8/7.2A 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4972DY-T1-E3

• Transistor Polarity: Dual N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.8A, 7.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0145 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A @ Channel 1 or 6.4 A @ Channel 2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 120mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4972DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73849.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
0.01
0.1
0.01
1
0.1
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.05
0.02
0.1
0.2
Single Pulse
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient (Ch 2)
10
-3
Normalized Thermal Transient Impedance, Junction-to-Case (Ch 2)
10
-2
Square Wave Pulse Duration (s)
10
-2
10
Pulse Time (s)
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
= P
t
2
Vishay Siliconix
DM
100
Z
thJA
thJA
t
t
1
2
Si4972DY
(t)
= 120 C/W
www.vishay.com
1000
10
11