SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4972DY-T1-E3
• Description: MOSFT DL NCH 30V 10.8/7.2A 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4972DY-T1-E3

• Transistor Polarity: Dual N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.8A, 7.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0145 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.7 A @ Channel 1 or 6.4 A @ Channel 2
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 120mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4972DY-T1-E3TR

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
I
I
D
= 2 A, dI/dt = 100 A/µs, T
= 2 A, dI/dt = 100 A/µs, T
I
I
D
D
D
≅ 5 A, V
≅ 5 A, V
≅ 5 A, V
≅ 5 A, V
V
V
V
V
DD
DD
DD
DD
GEN
= 15 V, R
= 15 V, R
= 15 V, R
= 15 V, R
GEN
T
Channel 1
GEN
Channel 2
GEN
Channel 1
Channel 2
Channel 1
Channel 2
I
I
Test Conditions
S
S
C
= 1.6 A
= 1.6 A
= 25 °C
= 4.5 V, R
= 4.5 V, R
= 10 V, R
= 10 V, R
L
L
L
L
= 3 Ω
= 3 Ω
= 3 Ω
= 3 Ω
g
g
g
g
J
J
= 16 Ω
= 1 Ω
= 1 Ω
= 1 Ω
= 25 °C
= 25 °C
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Min.
Typ.
0.77
0.79
120
150
108
130
12
55
30
29
13
21
15
13
10
60
22
19
26
18
11
11
7
8
Vishay Siliconix
6
7
a
Si4972DY
Max.
180
225
162
195
2.5
1.2
2.1
1.2
18
83
45
11
44
20
20
42
30
15
90
33
29
39
20
36
22
9
www.vishay.com
Unit
nC
ns
ns
ns
A
V
3