SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet

MOSFT DL NCH 30V 10.8/7.2A 8SOIC

SI4972DY-T1-E3

Manufacturer Part Number
SI4972DY-T1-E3
Description
MOSFT DL NCH 30V 10.8/7.2A 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4972DY-T1-E3

Transistor Polarity
Dual N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.5 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.8A, 7.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V @ Channel 1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A @ Channel 1 or 6.4 A @ Channel 2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8.7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
20V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4972DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI4972DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W (Ch 1) and 120 °C/W (Ch 2).
Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
Channel 1
Channel 2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free)
C
V
DS
G
G
= 25 °C.
S
S
30
30
1
1
2
2
(V)
1
2
3
4
0.0195 at V
0.0145 at V
0.0265 at V
0.036 at V
Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
R
J
SO-8
DS(on)
= 150 °C)
b, d
Dual N-Channel 30-V (D-S) MOSFET
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
8
7
6
5
D
D
D
D
1
1
2
2
I
D
10.8
t ≤ 10 s
9.3
7.2
6.2
Steady
(A)
A
a
= 25 °C, unless otherwise noted
Q
g
8.3
(Typ.)
4
Symbol
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
R
R
C
C
A
A
C
A
C
C
A
A
thJA
thJF
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Logic DC/DC for Notebook PC
Typical
Available
G
52
32
1
Channel 1
Symbol
T
N-Channel MOSFET
J
V
V
E
I
I
I
P
, T
DM
SM
I
I
AS
DS
GS
D
AS
S
D
g
stg
Tested
Maximum
®
D
S
Power MOSFET
62.5
1
1
40
Channel 1
1.25
8.7
6.9
1.6
2.0
10.8
8.7
2.5
3.1
2.1
20
20
15
11
b,c
b,c
b,c
b,c
b,c
Typical
- 55 to 150
55
40
G
2
± 20
Channel 2
30
N-Channel MOSFET
Vishay Siliconix
Channel 2
Maximum
1.25
6.4
5.1
1.6
2.0
7.2
5.7
2.1
1.8
2.5
1.6
20
20
Si4972DY
6
62.5
D
S
b,c
b,c
b,c
b,c
50
2
b,c
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4972DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free) Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4972DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage ΔV V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State R b Resistance b Forward Transconductance a Dynamic ...

Page 3

... GEN g Channel 2 t d(off Ω ≅ Ω 4 GEN ° 1 1 Channel dI/dt = 100 A/µ ° Channel dI/dt = 100 A/µ ° Si4972DY Vishay Siliconix a Min. Typ. Max. Unit 120 180 Ch 2 108 162 Ch 1 150 225 Ch 2 130 195 2 2.1 ...

Page 4

... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics (Ch 1) 0.020 0.018 0.016 0.014 0.012 0.010 Drain Current ( On-Resistance vs. Drain Current and Gate Voltage ( Total Gate Charge (nC) g Gate Charge (Ch 1) www.vishay.com thru 4 V ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient (Ch 1) Si4972DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source ( 0.001 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient (Ch 1) ...

Page 6

... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot ( The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...

Page 7

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Ch 1) Document Number: 73849 S09-0138-Rev. D, 02-Feb- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Si4972DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( – thJA 4 ...

Page 8

... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) GS Output Characteristics (Ch 2) 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current Gate Voltage ( Total Gate Charge (nC) g Gate Charge (Ch 2) www.vishay.com 8 1.5 1.2 ...

Page 9

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient (Ch 2) Si4972DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient ( 100 ...

Page 10

... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* (Ch 2) 1.5 1.2 0.9 0.6 0.3 0 Ambient Temperature (°C) A Power Derating, Junction-to-Ambient ( The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73849. Document Number: 73849 S09-0138-Rev. D, 02-Feb- Pulse Time ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Ch 2) Si4972DY Vishay Siliconix Notes Duty Cycle ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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