SI4972DY-T1-E3 Vishay, SI4972DY-T1-E3 Datasheet
SI4972DY-T1-E3
Specifications of SI4972DY-T1-E3
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SI4972DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free) Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si4972DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage ΔV V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State R b Resistance b Forward Transconductance a Dynamic ...
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... GEN g Channel 2 t d(off Ω ≅ Ω 4 GEN ° 1 1 Channel dI/dt = 100 A/µ ° Channel dI/dt = 100 A/µ ° Si4972DY Vishay Siliconix a Min. Typ. Max. Unit 120 180 Ch 2 108 162 Ch 1 150 225 Ch 2 130 195 2 2.1 ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics (Ch 1) 0.020 0.018 0.016 0.014 0.012 0.010 Drain Current ( On-Resistance vs. Drain Current and Gate Voltage ( Total Gate Charge (nC) g Gate Charge (Ch 1) www.vishay.com thru 4 V ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient (Ch 1) Si4972DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source ( 0.001 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient (Ch 1) ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot ( The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Ch 1) Document Number: 73849 S09-0138-Rev. D, 02-Feb- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Si4972DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( – thJA 4 ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) GS Output Characteristics (Ch 2) 0. 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current Gate Voltage ( Total Gate Charge (nC) g Gate Charge (Ch 2) www.vishay.com 8 1.5 1.2 ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient (Ch 2) Si4972DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient ( 100 ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* (Ch 2) 1.5 1.2 0.9 0.6 0.3 0 Ambient Temperature (°C) A Power Derating, Junction-to-Ambient ( The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73849. Document Number: 73849 S09-0138-Rev. D, 02-Feb- Pulse Time ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Ch 2) Si4972DY Vishay Siliconix Notes Duty Cycle ...
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