FDS6890A Fairchild Semiconductor, FDS6890A Datasheet

FDS6890A

Manufacturer Part Number

FDS6890A

Description

MOSFET N-CH DUAL 20V 7.5A 8SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDS6890A.pdf (5 pages)

Specifications of FDS6890A

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

18 mOhm @ 7.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

7.5A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

32nC @ 4.5V

Input Capacitance (ciss) @ Vds

2130pF @ 10V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.018Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±8V

Drain Current (max)

7.5A

Power Dissipation

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOIC N

Configuration

Dual Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.018 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

35 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

7.5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

7.5A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

18mohm

Rds(on) Test Voltage Vgs

4.5V

Threshold Voltage Vgs Typ

800mV

Rohs Compliant

Yes

Module Configuration

Dual

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS6890A

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Part Number

Manufacturer

Quantity

Price

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Part Number:

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Fairchild Semiconductor

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Part Number:

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Part Number:

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Manufacturer:

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Quantity:

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Current page: 1 of 5
Download datasheet (110Kb)

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

General Description

These N-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

FDS6890A

Dual N-Channel 2.5V Specified PowerTrench

Applications

•

DSS

GSS

, T

DC/DC converter

Motor drives

Device Marking

stg

FDS6890A

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8

pin 1

- Continuous

- Pulsed

FDS6890A

Device

Parameter

=25

C unless otherwise noted

Reel Size

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1)

(Note 1a)

Features

•

7.5 A, 20 V. R

Low gate charge (23nC typical).

Fast switching speed.

High performance trench technology for extremely

low R

High power and current handling capability.

DS(ON

MOSFET

)

DS(ON

DS(ON)

Tape W idth

)

12mm

= 0.022

= 0.018

-55 to +150

Ratings

7.5

1.6

1.0

0.9

2.0

@ V

= 2.5 V.

November 1999

= 4.5 V

2500 units

Quantity

FDS6890A Rev. C

Units

C/W

Related parts for FDS6890A

FDS6890A Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13 November 1999 MOSFET = 0.018 @ V = 4.5 V DS(ON 0.022 @ V = 2.5 V. DS( Ratings Units 20 8 7.5 20 2.0 1.6 1.0 0.9 -55 to +150 78 C/W 40 C/W 90 Tape W idth Quantity 12mm 2500 units FDS6890A Rev ...

Page 2

... Min Typ Max Units mV 100 nA -100 nA 0.5 0.8 1.5 V -3.5 mV/ C 0.013 0.018 0.021 0.034 =125 C 0.016 0.022 2130 pF 545 pF 270 3.2 nC 4.4 nC 1.3 A 0.65 1.2 V (Note 2) c) 135 C/W when mounted on a minimum pad. 2 FDS6890A Rev. C ...

Page 3

... Gate-to-Source Voltage. 100 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current =1.8V 2.0V 2.5V 3.0V 3.5V 4 DRAIN CURRENT ( =3. 125 GATE TO SOURCE VOLTAGE ( =125 -55 C 0.2 0.4 0.6 0 BODY DIODE VOLTAGE (V) SD and Temperature. FDS6890A Rev. C ...

Page 4

... Figure 8. Capacitance Characteristics. 30 100 0.01 100 Figure 10. Single Pulse Maximum 0.01 0 TIME (s ec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PUL SE R = 0.1 0 100 300 SINGLE PULSE TIME (SEC) Power Dissipation 135 C 100 300 FDS6890A Rev. C ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...

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