SI4569DY-T1-E3 Vishay, SI4569DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4569DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4569DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A, 6.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 27mohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4569DY-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
100
- 0.1
- 0.3
10
0.7
0.5
0.3
0.1
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
0
T
- Source-to-Drain Voltage (V)
J
T
Threshold Voltage
= 150 °C
J
- Temperature (°C)
25
0.6
50
0.9
75
I
D
= 250 µA
T
0.01
100
100
0.1
J
10
I
D
= 25 °C
1
1.2
0.0
= 5 mA
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
GS
Single Pulse
T
>
A
= 25 °C
V
150
minimum V
1.5
DS
0.1
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
1
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
50
40
30
20
10
0
0.001
10
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 s
10 s
10 ms
100 ms
DC
1 ms
2
0.01
100
V
GS
3
- Gate-to-Source Voltage (V)
T
A
= 25 °C
4
Time (s)
0.1
Vishay Siliconix
5
T
A
6
= 125 °C
Si4569DY
I
7
D
www.vishay.com
= 6 A
1
8
9
10
10
9