SI4569DY-T1-E3 Vishay, SI4569DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4569DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4569DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A, 6.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 27mohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4569DY-T1-E3TR

Si4569DY
Vishay Siliconix
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
rss
iss
fs
gs
gd
g
g
/T
/T
J
J
V
V
V
V
DS
V
DS
V
V
V
DS
DS
DS
DS
DS
DS
= - 20 V, V
= - 20 V, V
= - 40 V, V
V
V
= - 20 V, V
V
V
= 40 V, V
V
V
= 20 V, V
V
= 20 V, V
V
V
V
= 20 V, V
V
GS
DS
V
V
DS
GS
DS
DS
DS
V
V
GS
GS
DS
GS
DS
DS
GS
DS
= V
= - 4.5 V, I
= - 5 V, V
= 0 V, V
= 0 V, I
= V
= - 40 V, V
= 0 V, I
= - 10 V, I
= 4.5 V, I
= - 15 V, I
I
I
= 40 V, V
= 5 V, V
D
D
I
I
= 10 V, I
= 15 V, I
N-Channel
P-Channel
N-Channel
P-Channel
D
D
f = 1 MHz
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
GS
GS
GS
, I
, I
D
= - 4.5 V, I
D
= 0 V, T
= - 10 V, I
D
GS
= 0 V, f = 1 MHz
= 4.5 V, I
D
= 0 V, T
= 10 V, I
= 0 V, f = 1 MHz
GS
GS
= - 250 µA
= - 250 µA
= 250 µA
D
D
= 250 µA
GS
D
D
D
D
GS
= ± 16 V
= 4.8 A
= - 4.9 A
= 10 V
= - 10 V
= 6 A
= - 6 A
= 6 A
= - 6 A
= 0 V
= 0 V
J
J
D
= 55 °C
D
D
= 55 °C
D
= 5 A
= 5 A
= - 5 A
= - 5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.8
- 40
- 20
0.6
40
20
S09-0393-Rev. B, 09-Mar-09
Document Number: 73586
Typ.
0.022
0.024
0.026
0.031
1505
- 38
855
105
230
175
4.0
9.6
2.3
4.5
3.2
9.2
2.5
6.5
37
- 5
20
17
65
21
41
21
a
0.027
0.029
0.032
0.039
Max.
- 100
- 2.2
14.5
100
- 10
2.0
3.8
- 1
10
32
62
31
10
1
Unit
µA
nC
nA
pF
V
A
Ω
S
Ω