si4569dy Vishay, si4569dy Datasheet
si4569dy
Available stocks
Related parts for si4569dy
si4569dy Summary of contents
Page 1
... Top View Ordering Information: Si4569DY-T1—E3 (Lead (Pb)-free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C) Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current (10 ms Pulse Width) Source Drain Current Diode Current Source-Drain Current Diode Current ...
Page 2
... Si4569DY Vishay Siliconix _ Parameter Static Drain Source Breakdown Voltage Drain-Source Breakdown Voltage V V Temperature Coefficient Temperature Coefficient Temperature Coefficient Temperature Coefficient GS(th) GS( h) Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...
Page 3
... –1 N-Channel N-Channel di/dt = 100 A/ms Channel P-Channel –5 A, di/dt = –100 A/ms Si4569DY Vishay Siliconix a Min Typ N- P- N- N-Ch 26 ...
Page 4
... Si4569DY Vishay Siliconix Output Characteristics thru 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.030 0.028 0.026 0.024 0.022 0.020 0.018 – Drain Current (A) D Gate Charge ...
Page 5
... Safe Operating Area, Junction-to-Ambient 100 10 *Limited by r DS(on Single Pulse 0.01 0.01 0 – Drain-to-Source Voltage ( minimum which DS(on) Si4569DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0.15 0.12 0.09 0.06 = 125 0. 0. – Gate-to-Source Voltage (V) ...
Page 6
... Si4569DY Vishay Siliconix Power De-Rating, Junction-to-Foot 4.0 3.2 2.4 1.6 0.8 0 – Case Temperature (_C 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for *The power dissipation P is based J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
Page 7
... Document Number: 73586 S–52491—Rev. A, 12-Dec-05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4569DY Vishay Siliconix Notes Duty Cycle 110 _C/W 2. Per Unit Base = R thJA (t) 3 ...
Page 8
... Si4569DY Vishay Siliconix Output Characteristics thru 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.040 0.035 0.030 0.025 0.020 0.015 – Drain Current (A) D Gate Charge ...
Page 9
... Safe Operating Area, Junction-to-Ambient 100 10 *Limited by r DS(on Single Pulse 0.01 0.0 0 – Drain-to-Source Voltage ( minimum which DS(on) Si4569DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0. 0.12 0.09 0.06 = 125 0. 0. – ...
Page 10
... Si4569DY Vishay Siliconix Power De-Rating, Junction-to-Foot 4.0 3.2 2.4 1.6 0.8 0 – Case Temperature (_C 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for *The power dissipation P is based J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
Page 11
... New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si4569DY Vishay Siliconix Notes Duty Cycle 120 _C/W 2 ...
Page 12
... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...