SI4569DY-T1-E3 Vishay, SI4569DY-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI4569DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4569DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A, 6.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 27mohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4569DY-T1-E3TR

Si4569DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.040
0.035
0.030
0.025
0.020
0.015
20
16
12
10
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
I
D
= 6 A
V
0.5
GS
V
9
4
DS
= 4.5 V
V
Q
Output Characteristics
DS
g
- Drain-to-Source Voltage (V)
V
1.0
I
- Total Gate Charge (nC)
D
= 20 V
GS
Gate Charge
- Drain Current (A)
V
18
= 10 thru 4 V
8
DS
= 10 V
1.5
V
GS
V
27
12
DS
= 10 V
2.0
= 30 V
36
16
2.5
3.0
45
20
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
I
rss
D
- 25
= 6 A
0.8
V
V
8
DS
GS
T
Transfer Characteristics
0
T
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 125 °C
25 °C
25
Capacitance
1.6
C
16
iss
S09-0393-Rev. B, 09-Mar-09
50
Document Number: 73586
C
oss
2.4
24
V
75
GS
- 55 °C
= 10 V
100
V
GS
3.2
32
= 4.5 V
125
150
4.0
40