SI4569DY-T1-E3 Vishay, SI4569DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4569DY-T1-E3
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4569DY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A, 6.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 6 A @ N Channel or 6.1 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 27mohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4569DY-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73586
S09-0393-Rev. B, 09-Mar-09
100.000
10.000
1.000
0.010
0.100
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.00
- 50
I
D
Source-Drain Diode Forward Voltage
- 25
= 5 mA
I
0.2
D
T
V
J
SD
= 250 µA
= 150 °C
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
50
0.6
T
J
75
= 25 °C
0.8
0.01
100
100
0.1
10
0.01
1
1.0
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
125
GS
Single Pulse
T
>
A
1.2
= 25 °C
150
V
minimum V
0.1
DS
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
1
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
50
40
30
20
10
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
1 s
1 ms
100 ms
10 s
DC
2
0.01
100
V
GS
T
A
3
- Gate-to-Source Voltage (V)
= 25 °C
4
Time (s)
0.1
5
Vishay Siliconix
T
A
6
= 125 °C
Si4569DY
7
www.vishay.com
1
I
D
8
= 6 A
9
10
10
5