FDS8926A Fairchild Semiconductor, FDS8926A Datasheet - Page 4

• Manufacturer Part Number: FDS8926A
• Description: MOSFET N-CH DUAL 30V 5.5A SO-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8926A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8926A; FDS8926ATR

Typical Electrical And Thermal Characteristics
0.03
0.01
0.3
0.1
50
10
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
3
1
5
4
3
2
1
0
0.1
0
I = 5.5A
D
R
0.005
0.002
0.001
SINGLE PULSE
0.05
0.02
0.01
JA
0.2
0.5
0.2
0.1
0.0001
V
1
=135 °C/W
T = 25°C
GS
A
= 4.5V
5
D = 0.5
V
0.5
DS
0.2
, DRAI N-SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
0.1
g
0.05
1
10
0.02
Figure 11. Transient Thermal Response Curve.
0.001
0.01
2
Single Pulse
V
DS
15
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
= 5V
5
10V
15V
10
20
0.01
20 30
25
50
0.1
t , TIME (sec)
1
3000
1000
500
200
30
25
20
15
10
80
30
5
0
0.01
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
1
f = 1 MHz
V
GS
= 0V
V
0.1
DS
0.4
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Dissipation.
0.5
1
P(pk)
10
1
T - T
R
Duty Cycle, D = t /t
J
R
JA
2
t
JA
1
A
(t) = r(t) * R
t
= P * R
= 135 °C/W
2
10
R
5
SINGLE PULSE
JA
JA
100
T = 25°C
1
A
(t)
=135° C/W
JA
2
10
50 100
C oss
C rss
C iss
300
FDS8926A Rev.B
30
300