FDS6910 Fairchild Semiconductor, FDS6910 Datasheet - Page 2

• Manufacturer Part Number: FDS6910
• Description: MOSFET N-CH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1130pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6910

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Q
DSS
GSS
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
G
g(TOT)
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Source Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
A
V
D
D
= 25°C unless otherwise noted
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DD
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 24 V,
= 24 V, V
= V
= 5 V,
= 15 V,
= 0 V,
= 20 V, V
= 10 V,
= 4.5 V, I
= 10 V, I
= 10 V,
= 15 mV, f = 1.0 MHz
= 15 V,
= 10 V,
= 15 V,
Test Conditions
GS
,
D
GS
I
V
I
I
V
I
V
I
R
I
= 7.5 A,T
D
D
D
D
D
D
D
GS
DS
DS
GEN
GS
= 0 V, T
= 7.5 A,
= 250 A
= 250 A
= 7.5 A
= 6.5 A
= 7.5 A
= 1 A,
= 0 V
= 0 V
= 5 V
= 0 V,
= 6
J
J
= 125 C
= 55 C
Min Typ Max Units
20
30
1
1130
–4.7
10.6
14.5
300
100
1.8
2.4
3.1
2.7
28
13
36
26
17
9
5
7
9
10
100
13
17
20
18
10
42
14
24
13
1
3
FDS6910 Rev B(W)
mV/ C
mV/ C
m
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A