NDS9953A Fairchild Semiconductor, NDS9953A Datasheet
NDS9953A
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NDS9953A Summary of contents
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... High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1996 = 0. -10V. DS(ON DS(ON NDS9953A -30 ± 20 ± 2.9 ± 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W NDS9953A.SAM ...
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... 125° -4 -0 125° - - 1.0 MHz GEN GEN Min Typ Max Units - µA -25 µA 100 nA -100 nA -1 -1.6 -2.8 V -0.85 -1.25 -2.5 0.11 0.13 0.15 0.21 0.17 0.2 0.24 0.32 - 350 pF 260 pF 100 1.6 nC 3.4 nC NDS9953A.SAM ...
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... C/W when mounted on a 0.003 in 2 pad of 2oz cpper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1.25 A (Note -1. /dt = 100 A/µ Min Typ Max Units -1.2 -0.8 -1.3 100 ns is guaranteed NDS9953A.SAM A V ...
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... Figure 6. Gate Threshold Variation with V = -3.5V GS -4.0 -4.5 -5.0 -5 DRAIN CURRENT (A) D Voltage and Drain Current. = -10V 125°C J 25° - DRAIN CURRENT (A) D Current and Temperature -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -7.0 -8.0 -10 -15 -55°C -15 GS 125 150 NDS9953A.SAM ...
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... Figure 8. Body Diode Forward Voltage iss 6 C oss rss Figure 10. Gate Charge Characteristic. 25°C 125° - 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature V = -10V = -2. GATE CHARGE (nC) g 1.4 . -20V -15V 12 NDS9953A.SAM ...
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... Still Air 1 0 0.1 0 Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area 0.01 0 TIME (sec 4.5"x5" FR-4 Board Still Air 0.2 0.3 0.4 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1c JA P(pk ( Duty Cycle 100 300 1a 0.5 NDS9953A.SAM ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...