This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... A Test Conditions 1.3 A (Note –1.3 A (Note determined by the user's board design 125°C/W when 2 mounted on a .02 in pad copper Type Min Typ Max Units Q1 1 –1.3 Q1 0.8 1 –0.8 –1.2 c) 135°C/W when mounted on a minimum pad. FDS4559 Rev C1(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.5V GS -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4559 Rev C1( 1.4 ...
... C RSS Figure 8. Capacitance Characteristics. 40 100 s 30 10ms 0.01 100 Figure 10. Single Pulse Maximum MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. FDS4559 Rev C1(W) 60 1000 ...
... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4559 Rev C1(W) 10 1.2 ...
... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 135 C 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 FDS4559 Rev C1(W) 60 1000 / t 2 1000 ...