FDS6912A Fairchild Semiconductor, FDS6912A Datasheet
FDS6912A
Manufacturer Part Number
FDS6912A
Description
MOSFET N-CH DUAL 30V 6A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS6912A.pdf
(5 pages)
Specifications of FDS6912A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.1nC @ 5V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.028Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
6A
Power Dissipation
1.6W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6912ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6912A
Manufacturer:
FAIRCHIL
Quantity:
29 332
Company:
Part Number:
FDS6912A
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS6912A
Manufacturer:
FAIRCHILD
Quantity:
2 785
Part Number:
FDS6912A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6912A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6912A/FDS6912
Manufacturer:
KODENSHI
Quantity:
8 000
Final PCN Q3073705 is an addendum for Final PCN Q1070805.
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2007/12/10
Earliest Year/Work Week of Changed Product: 0750
Change Type Description: Bond Wire Material Composition
Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices
manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.
Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.
Products will be shipped for an interim period of time with Au wire until the inventory is
depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949
certified.
Qual/REL Plan Numbers : Q20070231
Qualification :
This change will have no impact on any of the electrical parameters of the products
involved. The product test conditions, test limits and performance will remain
unchanged. Products will be built with the same level of quality and reliability as with
the existing products. The devices for qualification and qualification requirements are
defined in the table below.
Results/Discussion
Test: (Autoclave)
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2007/10/12
Date Created : 2007/09/11
PCN# : Q3073705
Pg. 1
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FDS6912A Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... Q20070231BAPRCL FDS3570 Q20070231CAPRCL FDS3672 Q20070231CAPRCL FDS3672 Q20070231DAPRCL FDS8870 Q20070231DAPRCL FDS8870 Test: -65C, 150C (Temperature Cycle) Lot Device Q20070231AATMCL1 FDS6912A Q20070231AATMCL1 FDS6912A Q20070231BATMCL1 FDS3570 Q20070231BATMCL1 FDS3570 Q20070231CATMCL1 FDS3672 Q20070231CATMCL1 FDS3672 Q20070231DATMCL1 FDS8870 Q20070231DATMCL1 FDS8870 Test: 130C (Highly Accelerated Stress Test) Lot Device ...
Page 3
... FDS9958 NDS9407_F095 SI9933BDY FDS2582 FDS3512_NL FDS3601_NL FDS3682 FDS3890_NL FDS4410A_NL FDS4435_F095 FDS4470_NL FDS4501H_F065 FDS4885C_NL FDS4953_NL FDS5672 FDS5682 FDS6294_NL FDS6570A_NF40 FDS6575_NL FDS6670A_NF40 FDS6680A_NF40 FDS6688_F095 FDS6694_NL FDS6875_NL FDS6892AZ_NL FDS6894AZ_NL FDS6898AZ_NL FDS6898A_NL FDS6912A_NF40 FDS6961A FDS6961A_NF40 FDS6982AS_NL FDS8333C FDS8817NZ FDS8960C FDS9400A_NL FDS9435A_NL FDS9933A_NL FDS9953A NDS8425_NF40 NDS9435A_NL Pg. 3 ...