FDS8984 Fairchild Semiconductor, FDS8984 Datasheet

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... Operating and Storage Temperature J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient θJA R Thermal Resistance, Junction-to-Case θJC Package Marking and Ordering Information Device Marking Device FDS8984 FDS8984 ©2007 Fairchild Semiconductor Corporation FDS8984 Rev. A1 ® MOSFET Features Max r DS(on) Max r DS(on) Low gate charge 100% R RoHS Compliant ...

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... R θJC a) 78°C/W when mounted on a 0.5in pad copper Scale letter size paper ° 2: Starting 1mH 8A µs, 3: Pulse Test:Pulse Width <300 Duty Cycle <2%. FDS8984 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 24V DS ...

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... JUNCTION TEMPERATURE J Figure 3. On Resistance vs Temperature 30 PULSE DURATION =80 µ S DUTY CYCLE =0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS8984 Rev 25°C unless otherwise noted J 3.0 µ S 2.5 V =3.5V GS 2.0 1.5 V =3.0V GS 1.0 0.5 2.5 3.0 3.5 4.0 5 Figure ...

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... OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 0.01 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDS8984 Rev 25°C unless otherwise noted J 700 600 500 f = 1MHz V = 15V DD V 400 300 V = 20V DD 200 100 0.1 stics Figure 8 ...

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... Typical Characteristics 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve FDS8984 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION( NOTES: DUTY FACTOR PEAK θJA θ www.fairchildsemi.com 3 10 ...

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... Definition of Terms Product Status Datasheet Identification Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS8984 Rev. A1 HiSeC™ Power-SPM™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ® IntelliMAX™ QFET ISOPLANAR™ ...