FDS6961A Fairchild Semiconductor, FDS6961A Datasheet - Page 3

• Manufacturer Part Number: FDS6961A
• Description: MOSFET N-CH DUAL 30V 3.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6961A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 220pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6961A

Typical Electrical Characteristics
8
6
4
2
0
15
12
1
9
6
3
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
0
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
1
V
-50
DS
=5.0V
V
V
I = 3.5A
GS
D
GS
-25
= 10V
= 10V
1
V
GS
2
V
Temperature.
6.0V
, GATE TO SOURCE VOLTAGE (V)
DS
T , JUNCTION TEMPERATURE (°C)
0
J
, DRAIN-SOURCE VOLTAGE (V)
4.5V
4.0V
2
25
3.5V
3
T = -55°C
J
50
3.0V
3
75
125°C
4
100
25°C
4
125
5
5
150
0.24
0.18
0.12
0.06
0.3
0.001
2.5
1.5
0.5
Figure 2. On-Resistance Variation with
0
0.01
Figure 4. On-Resistance Variation with
2
1
0.1
Figure 6. Body Diode Forward Voltage
2
10
0
1
0.2
V
GS
V
= 0V
GS
= 3.5V
V
3
Drain Current and Gate Voltage.
V
SD
0.4
GS
Variation with Source Current
and Temperature.
4
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
I
D
4.0 V
, DRAIN CURRENT (A)
T = 125°C
6
J
0.6
4.5 V
6
25°C
5.0V
-55°C
9
0.8
125°C
25°C
6.0V
8
10V
12
I = 3.5A
D
1
FDS6961A Rev.C
10
15
1.2