FDMA1023PZ Fairchild Semiconductor, FDMA1023PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA1023PZ
• Description: MOSFET P-CHAN DUAL MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 655pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1023PZTR

FDMA1023PZ Rev.C4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
BV
GS(th)
iss
oss
rss
SD
g(TOT)
gs
gd
rr
V
Symbol
DSS
T
T
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Source-Drain Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
V
V
V
I
V
f = 1MHz
V
V
V
V
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
GS
DS
DD
GS
DD
GS
GS
DS
= –3.7A, di/dt = 100A/ s
= –250 A, V
= –250 A, referenced to 25°C
= –250 A, referenced to 25°C
= –16V, V
= –5V, I
= –4.5V
= 0V, I
= ±8V, V
= V
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –1.5V, I
= –4.5V, I
= –10V, V
= –10V, I
= –4.5V, R
= –10V, I
DS
2
Test Conditions
, I
S
D
= –1.1A
D
DS
D
D
D
D
= –3.7A
GS
GS
GS
= –250 A
D
D
D
GEN
= –1A
= –3.7A
= 0V
= –3.7A,T
= –3.7A
= –3.2A
= –2.0A
= –1.0A
= 0V,
= 0V
= 0V
= 6
(Note 2)
J
=125°C
–0.4
Min
–20
–0.8
–0.7
490
100
100
130
8.6
0.7
2.0
Typ
2.5
90
12
64
37
32
15
–11
60
75
81
12
9
–1.1
–1.2
–1.0
655
135
Max
130
195
135
103
±10
48
23
72
95
91
18
22
60
12
–1
www.fairchildsemi.com
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
A
V
V
S
A
A