FDG6321C Fairchild Semiconductor, FDG6321C Datasheet - Page 5

• Manufacturer Part Number: FDG6321C
• Description: MOSFET N/P-CH DUAL 25V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6321C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 500mA, 410mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 1.45 S, 0.9 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 0.5 A @ N Channel or 0.41 A @ P Channel
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 800mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6321C

Typical Electrical Characteristics: N-Channel
0.05
0.02
0.01
5
4
3
2
1
0
0.5
0.2
0.1
0
Figure 7. Gate Charge Characteristics.
3
1
I = 0.5A
Figure 9. Maximum Safe Operating Area.
0.1
D
R
SINGLE PULSE
0.4
JA
V
T = 25°C
GS
A
= 415 °C/W
= 4.5V
V
DS
Q
g
, DRAI N-SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
0.8
1
2
1.2
V
DS
5
= 5V
1.6
10V
10
15V
25
2
40
50
40
30
20
10
0.0001
200
0
70
30
10
(continued)
3
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
0.001
GS
Dissipation.
= 0V
0.3
V
DS
0.01
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
1
0.1
2
1
SINGLE PULSE
R
5
JA
T = 25°C
A
=415°C/W
10
FDG6321C Rev. D
10
C iss
C oss
C rss
200
25